New PDF release: Advances in Photovoltaics: Part 3,

By Gerhard P. Willeke, Eicke R. Weber

ISBN-10: 0123884179

ISBN-13: 9780123884176

ISBN-10: 1211211231

ISBN-13: 9781211211232

This quantity is the 3rd of a collection of 7 regarding photovoltaics. sun cell-related applied sciences lined right here comprise: ribbon silicon; heterojunction crystalline silicon; wafer identical crystalline silicon; and different complicated silicon sun mobilephone buildings and processes.

Semiconductors and Semimetals has individual itself throughout the cautious collection of recognized authors, editors, and members. initially widely recognized because the "Willardson and Beer" sequence, it has succeeded in publishing quite a few landmark volumes and chapters. The sequence publishes well timed, hugely correct volumes meant for long term effect and reflecting the actually interdisciplinary nature of the sphere. The volumes in Semiconductors and Semimetals were and should stay of significant curiosity to physicists, chemists, fabrics scientists, and gadget engineers in academia, medical laboratories and glossy industry.

  • Written and edited via the world over well known experts
  • Relevant to a large readership: physicists, chemists, fabrics scientists, and equipment engineers in academia, clinical laboratories and sleek industry

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Additional info for Advances in Photovoltaics: Part 3,

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A direct plasma system usually operates at low frequency of 40 kHz. 12 These systems usually operate in batch mode. 56 MHz, the plasma is spatially separated from the wafer, and a linear plasma source is used with microwaves supplying the excitation. Remote plasma systems are usually operating in inline geometries with the wafers 11 12 Note that recombination rate is dependent on np in Eqs. 14). This surface damage is not necessarily negative, as it can provide a reservoir for H. State-of-the-Art Industrial Crystalline Silicon Solar Cells 27 lying on trays being transported through the reactor underneath the linear plasma source.

This should be kept in mind when optimizing not only the solar cell, but the complete PV system for an optimized energy output. 4. 1. Wafer sawing The standard technology for sawing of wafers is still slurry-based cutting of wafers using a steel wire as described in the previous section. As the wire has a diameter of around 120 μm, resulting in kerf loss of around 140 μm, and wafer thickness is typically 180 μm, around 40–50% of Si is lost during this step. The slurry used for cutting and cooling normally contains SiC particles for cutting and other additives contaminating the Si kerf.

2002, 2004) led to the following picture (Fig. 14). Below 600  C organic components burn out (A). At higher temperature, the contact is formed as first the PbO melts, wets, and etches the SiNx:H layer (B). The Ag particles with sizes of several μm sinter together and form a conductive film. Then a redox reaction between PbO and Si forms Pb (C). The liquid Pb starts to melt Ag (D), and the Ag/Pb melt reacts with Si, etching inverted pyramids locally into the c-Si surface (E). On cooling down Ag recrystallizes on (111)-Si planes, forming isolated contact points to the emitter (F).

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Advances in Photovoltaics: Part 3, by Gerhard P. Willeke, Eicke R. Weber


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