By Gerhard P. Willeke, Eicke R. Weber
This quantity is the 3rd of a collection of 7 regarding photovoltaics. sun cell-related applied sciences lined right here comprise: ribbon silicon; heterojunction crystalline silicon; wafer identical crystalline silicon; and different complicated silicon sun mobilephone buildings and processes.
Semiconductors and Semimetals has individual itself throughout the cautious collection of recognized authors, editors, and members. initially widely recognized because the "Willardson and Beer" sequence, it has succeeded in publishing quite a few landmark volumes and chapters. The sequence publishes well timed, hugely correct volumes meant for long term effect and reflecting the actually interdisciplinary nature of the sphere. The volumes in Semiconductors and Semimetals were and should stay of significant curiosity to physicists, chemists, fabrics scientists, and gadget engineers in academia, medical laboratories and glossy industry.
- Written and edited via the world over well known experts
- Relevant to a large readership: physicists, chemists, fabrics scientists, and equipment engineers in academia, clinical laboratories and sleek industry
Read or Download Advances in Photovoltaics: Part 3, PDF
Similar microelectronics books
Fresh advances in nanomedicine provide ground-breaking tools for the prevention, analysis and remedy of a few deadly illnesses. among the main promising nanomaterials being constructed are magnetic nanomaterials, together with magnetic nanoparticles and magnetic nanosensors. a few nanomagnetic scientific functions are already commercially to be had with extra set to be published over the arrival years.
Content material: Chemical amplification mechanisms for microlithography / E. Reichmanis, F. M. Houlihan, O. Nalamasu, and T. X. Neenan -- Synthesis of 4-(tert-butoxycarbonyl)-2,6-dinitrobenzyl tosylate : a possible generator and dissolution inhibitor solubilizable via chemical amplification / F. M. Houlihan, E.
Regardless of the huge wisdom collected on silicon, germanium, and their alloys, those fabrics nonetheless call for study, eminently in view of the development of information on silicon–germanium alloys and the possibilities of silicon as a substrate for high-efficiency sunlight cells and for compound semiconductors and the continuing improvement of nanodevices in response to nanowires and nanodots.
- Electronic circuit analysis and design
- Strength and Stiffness of Engineering Systems
- Future trends in microelectronics. journey into the unknown
Additional info for Advances in Photovoltaics: Part 3,
A direct plasma system usually operates at low frequency of 40 kHz. 12 These systems usually operate in batch mode. 56 MHz, the plasma is spatially separated from the wafer, and a linear plasma source is used with microwaves supplying the excitation. Remote plasma systems are usually operating in inline geometries with the wafers 11 12 Note that recombination rate is dependent on np in Eqs. 14). This surface damage is not necessarily negative, as it can provide a reservoir for H. State-of-the-Art Industrial Crystalline Silicon Solar Cells 27 lying on trays being transported through the reactor underneath the linear plasma source.
This should be kept in mind when optimizing not only the solar cell, but the complete PV system for an optimized energy output. 4. 1. Wafer sawing The standard technology for sawing of wafers is still slurry-based cutting of wafers using a steel wire as described in the previous section. As the wire has a diameter of around 120 μm, resulting in kerf loss of around 140 μm, and wafer thickness is typically 180 μm, around 40–50% of Si is lost during this step. The slurry used for cutting and cooling normally contains SiC particles for cutting and other additives contaminating the Si kerf.
2002, 2004) led to the following picture (Fig. 14). Below 600 C organic components burn out (A). At higher temperature, the contact is formed as first the PbO melts, wets, and etches the SiNx:H layer (B). The Ag particles with sizes of several μm sinter together and form a conductive film. Then a redox reaction between PbO and Si forms Pb (C). The liquid Pb starts to melt Ag (D), and the Ag/Pb melt reacts with Si, etching inverted pyramids locally into the c-Si surface (E). On cooling down Ag recrystallizes on (111)-Si planes, forming isolated contact points to the emitter (F).
Advances in Photovoltaics: Part 3, by Gerhard P. Willeke, Eicke R. Weber